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inchange semiconductor isc product specification isc silicon pnp power transistor 2SA1302 description high current capability high power dissipation high collector-emitter breakdown voltage- : v (br)ceo = -200v(min) complement to type 2sc3281 applications power amplifier applications recommend for 100w high fidelity audio frequency amplifier output stage applications absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -200 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i b b base current-continuous -1.5 a p c collector power dissipation @ t c =25 150 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SA1302 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ; i b = 0 -200 v v ce (sat) collector-emitter saturation voltage i c = -10a; i b = -1a -3.0 v v be( on ) base-emitter on voltage i c = -8a ; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -200v ; i e = 0 -5 a i ebo emitter cutoff current v eb = -5v; i c = 0 -5 a h fe-1 dc current gain i c = -1a ; v ce = -5v 55 160 h fe-2 dc current gain i c = -8a ; v ce = -5v 35 c ob output capacitance i e = 0;v cb = -10v;f test = 1.0mhz 470 pf f t current-gain?bandwidth product i c = -1a ; v ce = -5v 25 mhz ? h fe- 1 classifications r o 55-110 80-160 isc website www.iscsemi.cn 2 |
Price & Availability of 2SA1302 |
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